DocumentCode :
3453254
Title :
Current Collapse-Free Vertical Submicron Channel GaN-based Transistors with InAlGaN Quaternary Alloy Contact Layers
Author :
Morita, Tatsuo ; Nakazawa, Satoshi ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi
Author_Institution :
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co. Ltd., 1 Kotari-Yakemachi, Nagaokakyo-shi, Kyoto 617-8520, JAPAN. Email: morita.tatsuo@jp.panasonic.com /Phone:+81-75-956-9055 /Fax:+81-75-956-9110
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
97
Lastpage :
98
Keywords :
Aluminum gallium nitride; Current density; Current-voltage characteristics; Electrodes; Gallium nitride; Metalworking machines; Ohmic contacts; Pulse measurements; Scanning electron microscopy; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305136
Filename :
4097553
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453254
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