DocumentCode
3453267
Title
50 nm AlGaN/GaN HEMT Technology for mm-wave Applications
Author
Palacios, T. ; Fichtenbaum, N. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106-9560. E-mail: tpalacios@ece.ucsb.edu; Phone: +1 (805)893-3812 (x225); FAX: +1 (805)893-8714
fYear
2006
fDate
26-28 June 2006
Firstpage
99
Lastpage
100
Keywords
Aluminum gallium nitride; Electrons; Etching; Foot; Frequency; Gallium nitride; HEMTs; Lithography; Parasitic capacitance; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305137
Filename
4097554
Link To Document