DocumentCode
3453294
Title
Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation
Author
Shen, L. ; McCarthy, L. ; Palacios, T. ; Wong, M.H. ; Poblenz, C. ; Corrion, A. ; Keller, S. ; DenBaars, S.P. ; Speck, J.S. ; Mishra, U.K.
Author_Institution
Department of Electrical and Computer Engineering, University of California, Santa Barbara, U.S.A. Email: lkshen@ece.ucsb.edu Tel: +1(805)893-8594 Fax: +1(805)893-8714
fYear
2006
fDate
26-28 June 2006
Firstpage
101
Lastpage
102
Keywords
Aluminum gallium nitride; Etching; Gallium nitride; HEMTs; MODFETs; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305138
Filename
4097555
Link To Document