Title :
Study on the manufacturing technology of GaP-SnO2 structures for ultraviolet radiation sensors
Author :
Dorogan, V. ; Ivashchenco, Anatolii ; Snigur, Anatolii ; Shchurova, Olga ; Vieru, Tatiana
Author_Institution :
Tech. Univ. of Moldova, Kishinev, Moldova
Abstract :
The manufacturing technology of GaP-SnO2 structures for radiation sensors is described in this article. The technological methods are liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolysis for SnO2 deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial layers
Keywords :
III-V semiconductors; carrier density; gallium compounds; liquid phase epitaxial growth; pyrolysis; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; tin compounds; ultraviolet detectors; GaP-SnO2; free charge carrier concentration; incident solar intensity; liquid-phase epitaxial growth; manufacturing technology; ultraviolet radiation sensors; vapor pyrolysis; Manufacturing;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495062
