DocumentCode :
3453323
Title :
Model for the electrical conductance transient behaviour in thick film SnO2 semiconductor gas sensors
Author :
Vilanova, Xaviw ; Llobet, Eduard ; Correig, Xavier
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Rovira i Virgili, Tarragona, Spain
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
473
Lastpage :
476
Abstract :
An improved nonlinear diffusion-reaction model describing the conductance transient behaviour in thick film SnO2 n-type semiconductor gas sensors, which are subject to a step change in gas concentration, is introduced in this study. This model depicts accurately the experimental conductance transient of these sensors
Keywords :
diffusion; electrical conductivity; gas sensors; semiconductor device models; semiconductor materials; thick film devices; tin compounds; transient analysis; SnO2; electrical conductance transient behaviour; n-type semiconductor; nonlinear diffusion-reaction model; semiconductor gas sensors; thick film SnO2; Chemical sensors; Electron traps; Gas detectors; Gases; Nonlinear equations; Schottky barriers; Steady-state; Thick film sensors; Thick films; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495063
Filename :
495063
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453323
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