Title :
Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching
Author :
Ariga, M. ; Sekido, Y. ; Sakai, A. ; Baba, T. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical fabrication; reflectivity; semiconductor lasers; sputter etching; FDTD simulation; GaInAsP; high reflectivity; inductively coupled plasma condition; inductively coupled plasma etching; low threshold GaInAsP lasers; normalized lasing threshold; optical fabrication; semiconductor/air DBR laser; sidewall angle; vertical DBR laser fabrication; Computer networks; Distributed Bragg reflectors; Electronic mail; Etching; Laser modes; Optical coupling; Plasma applications; Reflectivity; Semiconductor lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814783
