Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching

Author

Ariga, M. ; Sekido, Y. ; Sakai, A. ; Baba, T. ; Matsutani, A. ; Koyama, F. ; Iga, K.

Author_Institution

Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1297

Abstract

We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical fabrication; reflectivity; semiconductor lasers; sputter etching; FDTD simulation; GaInAsP; high reflectivity; inductively coupled plasma condition; inductively coupled plasma etching; low threshold GaInAsP lasers; normalized lasing threshold; optical fabrication; semiconductor/air DBR laser; sidewall angle; vertical DBR laser fabrication; Computer networks; Distributed Bragg reflectors; Electronic mail; Etching; Laser modes; Optical coupling; Plasma applications; Reflectivity; Semiconductor lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814783

Filename

814783