The analysis of electrical processes in semiconductor cadmium selenide layers, caused by the structural transformations. Possible applications

Author

Grinevich, V.S. ; Smyntyna, V.A.

Author_Institution

Odessa State Univ., Ukraine

fYear

1995

fDate

11-14 Oct 1995

Firstpage

477

Lastpage

479

Abstract

The physical conditions of functioning of sensitive elements for elastic deformation registration in microvolumes of electronic systems are analysed. The sensitive element is a semiconductor polycrystalline film containing crystallites of a two phase structure of (α+β)CdSe. Considerable mechanical tensions arise at the intergrain boundary of the said α and β crystallites. The results of that can be registered electrically in the form of the sharp change of current (equilibrium conductivity) in the circuit containing the sensitive element

Keywords

II-VI semiconductors; cadmium compounds; crystallites; elastic deformation; electrical conductivity; grain boundaries; microsensors; semiconductor thin films; solid-state phase transformations; strain sensors; ATDEC; CdS; cadmium selenide; crystallites; elastic deformation; electrical processes; equilibrium conductivity; intergrain boundary; mechanical tension; microvolume; semiconductor polycrystalline film; sensitive element; structural transformation; two phase structure; Cadmium compounds; Contacts; Crystallization; Current measurement; Dark current; Glass; Lattices; Space heating; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.495064

Filename

495064