DocumentCode

3453358

Title

III-Nitride Field-Effect Transistors with Capacitively-Coupled Contacts

Author

Simin, G. ; Yang, Z.-J. ; Koudymov, A. ; Adivarahan, V. ; Yang, J. ; Khan, M.Asif

Author_Institution

Dept. of Electrical Engineering, University of South Carolina, Columbia, SC 29208. Phone: +1 (803)-777-0986; Fax: +1 (803)-777-2447; e-mail: simin@engr.sc.edu

fYear

2006

fDate

26-28 June 2006

Firstpage

103

Lastpage

104

Keywords

Aluminum gallium nitride; Annealing; Electrodes; FETs; Gallium nitride; HEMTs; MODFETs; MOSHFETs; Ohmic contacts; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305139

Filename

4097556