Title :
III-Nitride Field-Effect Transistors with Capacitively-Coupled Contacts
Author :
Simin, G. ; Yang, Z.-J. ; Koudymov, A. ; Adivarahan, V. ; Yang, J. ; Khan, M.Asif
Author_Institution :
Dept. of Electrical Engineering, University of South Carolina, Columbia, SC 29208. Phone: +1 (803)-777-0986; Fax: +1 (803)-777-2447; e-mail: simin@engr.sc.edu
Keywords :
Aluminum gallium nitride; Annealing; Electrodes; FETs; Gallium nitride; HEMTs; MODFETs; MOSHFETs; Ohmic contacts; Radio frequency;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305139
