DocumentCode :
3453370
Title :
How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies
Author :
Wu, Yuh-Renn ; Singh, Jasprit
Author_Institution :
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109. phone: 734-7643350, email: yrw@eecs.umich.edu
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
105
Lastpage :
106
Keywords :
Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Phonons; Poisson equations; Pulse measurements; Steady-state; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305140
Filename :
4097557
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453370
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