DocumentCode

3453370

Title

How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies

Author

Wu, Yuh-Renn ; Singh, Jasprit

Author_Institution

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109. phone: 734-7643350, email: yrw@eecs.umich.edu

fYear

2006

fDate

26-28 June 2006

Firstpage

105

Lastpage

106

Keywords

Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Phonons; Poisson equations; Pulse measurements; Steady-state; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305140

Filename

4097557