Title :
A monolithic integration of a tunable MEMS capacitor with GaN technology
Author :
Zine-El-Abidine, I. ; Dietrich, Jens
Author_Institution :
CMC Microsyst., Canada
Abstract :
This paper demonstrates a monolithic integration of MEMS tunable capacitor fabricated using CPFC GaN800 technology. The MEMS capacitor is based on a parallel-plate configuration with electrostatic actuation. A tuning range of 60% was achieved at 5 GHz and the resonant frequency was above 20 GHz.
Keywords :
III-V semiconductors; capacitors; gallium compounds; micromechanical devices; CPFC GaN800 technology; electrostatic actuation; frequency 5 GHz; parallel-plate configuration; resonant frequency; tunable MEMS capacitor monolithic integration; Capacitors; Fabrication; Gallium nitride; Metals; Micromechanical devices; Radio frequency; Resonant frequency; GaN; RF MEMS; microelectromechanical systems; tunable capacitor;
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2011 24th Canadian Conference on
Conference_Location :
Niagara Falls, ON
Print_ISBN :
978-1-4244-9788-1
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2011.6030490
