DocumentCode :
3453382
Title :
Electrical Performance of Ta-Based Ohmic Contacts on Undoped AlGaN/AlN/GaN Heterostructures
Author :
Sun, Yunju ; Eastman, L.F.
Author_Institution :
426 Phillips Hall, Cornell University, Ithaca NY 14853. E-mail: ys99@cornell.edu Phone: 607-255-1431/607-342-0651 Fax: 607-255-4742
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
107
Lastpage :
108
Keywords :
Aluminum gallium nitride; Annealing; Contact resistance; Gallium nitride; Gold; HEMTs; MODFETs; Ohmic contacts; Surface resistance; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305141
Filename :
4097558
Link To Document :
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