DocumentCode
3453401
Title
Two-way photomagnetoelectric effect [magnetic sensor]
Author
Lakatos, E.
Author_Institution
Baneasa SA, Bucharest
fYear
1995
fDate
11-14 Oct 1995
Firstpage
489
Lastpage
492
Abstract
The difference between the recombination velocities on both surfaces of the structure, determines a different photomagnetoelectric voltage, depending on the illuminated surface, under constant illumination and applied magnetic field. Based on this effect a magnetic sensor structure, having a new type of geometry, is presented
Keywords
galvanomagnetic effects; magnetic sensors; photoelectricity; photoelectromagnetic effects; surface recombination; Si; applied magnetic field; constant illumination; illuminated surface; magnetic sensor structure; photomagnetoelectric voltage; recombination velocities; two-way photomagnetoelectric effect; Geometry; Lighting; Magnetic fields; Magnetic sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495067
Filename
495067
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