DocumentCode :
3453401
Title :
Two-way photomagnetoelectric effect [magnetic sensor]
Author :
Lakatos, E.
Author_Institution :
Baneasa SA, Bucharest
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
489
Lastpage :
492
Abstract :
The difference between the recombination velocities on both surfaces of the structure, determines a different photomagnetoelectric voltage, depending on the illuminated surface, under constant illumination and applied magnetic field. Based on this effect a magnetic sensor structure, having a new type of geometry, is presented
Keywords :
galvanomagnetic effects; magnetic sensors; photoelectricity; photoelectromagnetic effects; surface recombination; Si; applied magnetic field; constant illumination; illuminated surface; magnetic sensor structure; photomagnetoelectric voltage; recombination velocities; two-way photomagnetoelectric effect; Geometry; Lighting; Magnetic fields; Magnetic sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495067
Filename :
495067
Link To Document :
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