Physical Mechanisms Limiting the Channel Mobility in 4H-SiC MOSFETs
Author :
Matocha, Kevin ; Tilak, Vinayak ; Balaji, S. ; Arthur, Steve ; Rao, Ramakrishna ; Tucker, Jesse
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
111
Lastpage :
112
Keywords :
Electron mobility; Hall effect; MOSFETs; Magnetic field measurement; Ohmic contacts; Oxidation; Silicon carbide; Substrates; Temperature; Threshold voltage;
