• DocumentCode
    3453425
  • Title

    Field effect in PbS-SiO2-Si heterostructures

  • Author

    Pintilie, L. ; Botiia, T. ; Pentia, E. ; Petre, D. ; Pintilie, I.

  • Author_Institution
    Inst. of Phys. & Technol. of Mater., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    493
  • Lastpage
    496
  • Abstract
    The photoconductive signal generated under illumination in a PbS thin film was varied between 1.5 mV and 7 mV by applying a voltage on the gate electrode of a PbS-SiO2-Si heterostructures. Also, a variation of the dark current was observed
  • Keywords
    IV-VI semiconductors; elemental semiconductors; lead compounds; photoconductivity; photodetectors; semiconductor heterojunctions; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; 1.5 to 7 mV; PbS-SiO2-Si; dark current variation; field effect; heterostructures; photoconductive signal; Dark current; Electrodes; Lighting; Photoconductivity; Signal generators; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.495068
  • Filename
    495068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453425