DocumentCode :
3453425
Title :
Field effect in PbS-SiO2-Si heterostructures
Author :
Pintilie, L. ; Botiia, T. ; Pentia, E. ; Petre, D. ; Pintilie, I.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
493
Lastpage :
496
Abstract :
The photoconductive signal generated under illumination in a PbS thin film was varied between 1.5 mV and 7 mV by applying a voltage on the gate electrode of a PbS-SiO2-Si heterostructures. Also, a variation of the dark current was observed
Keywords :
IV-VI semiconductors; elemental semiconductors; lead compounds; photoconductivity; photodetectors; semiconductor heterojunctions; semiconductor-insulator boundaries; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; 1.5 to 7 mV; PbS-SiO2-Si; dark current variation; field effect; heterostructures; photoconductive signal; Dark current; Electrodes; Lighting; Photoconductivity; Signal generators; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495068
Filename :
495068
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453425
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