DocumentCode
3453434
Title
Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric
Author
Liu, Chang ; Chor, Eng Fong ; Tan, Leng Seow
Author_Institution
Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576. Email: g0305764@nus.edu.sg, phone: +65-65162502
fYear
2006
fDate
26-28 June 2006
Firstpage
113
Lastpage
114
Keywords
Aluminum gallium nitride; Dielectric devices; Dielectric materials; Dielectric substrates; Gallium nitride; HEMTs; Hafnium oxide; Inorganic materials; Leakage current; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305144
Filename
4097561
Link To Document