Title :
Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric
Author :
Liu, Chang ; Chor, Eng Fong ; Tan, Leng Seow
Author_Institution :
Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576. Email: g0305764@nus.edu.sg, phone: +65-65162502
Keywords :
Aluminum gallium nitride; Dielectric devices; Dielectric materials; Dielectric substrates; Gallium nitride; HEMTs; Hafnium oxide; Inorganic materials; Leakage current; MODFETs;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305144
