Title :
Performance of the optimum noise source reflection coefficient (Γ0) vs. temperature in microwave HEMTs by model analysis
Author :
Caddemi, Alina ; Prima, F. Di ; Sannino, M.
Author_Institution :
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
In the present paper we exploit the results of the characterization and modeling vs. frequency (2-18 GHz) and temperature (-50-20°C) of a series of pseudomorphic HEMTs to carry out an investigation on the noise parameter. We had previously observed from the characterization of several HEMT series at room temperature, that a close relationship exists between the optimum input termination reflection coefficient Γ0 and the scattering parameter S11 and it always occurred that |S11|>|Γ 0| over the frequency range given above. We here analyze the performance of |Γ0| at lower temperatures and use the equivalent circuit model to explore the cause of its variations with respect to its behavior at 20°C
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; 2 to 18 GHz; 20 to 50 C; PHEMT; characterization; equivalent circuit model; frequency; microwave HEMTs; model analysis; noise parameter; optimum noise source reflection coefficient; pseudomorphic HEMTs; scattering parameter; temperature; Acoustic reflection; Circuit noise; Equations; Equivalent circuits; HEMTs; Microwave frequencies; Noise figure; Scattering parameters; Space technology; Temperature;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495069
