Title :
Numerical Simulation of Field-Induced Inter-Band Tunneling Effect Transistor Using TCAD-Based Device Simulator
Author :
Kim, Kyung Rok ; Park, Byung-Gook ; Dutton, Robert W.
Author_Institution :
CISX 302, Stanford University, Stanford, CA 94305, USA. Phone: (650)725-6240, Fax: (650)725-7731, Email: krkim@gloworm.stanford.edu
Keywords :
Charge carrier processes; Doping; Numerical models; Numerical simulation; Semiconductor device modeling; Semiconductor diodes; Semiconductor process modeling; Silicon; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305147
