Title :
Dependence of linewidth enhancement factor on quantum well width and depth in lnGaAs/GaAs broad-area lasers
Author :
Stohs, J. ; Bossert, D.J. ; Gallant, D.J. ; Brueck, Steven R. J.
Author_Institution :
Center for High Technology Materials, University of New Mexico
Keywords :
Charge carrier density; Density measurement; Gallium arsenide; Lattices; Photoluminescence; Pulse measurements; Radiative recombination; Semiconductor lasers; Superlattices; Time measurement;
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
DOI :
10.1109/CLEO.1997.603050
