• DocumentCode
    3453585
  • Title

    Semiconducting transition metal silicide films-preparation, properties and possible applications

  • Author

    Lange, H.

  • Author_Institution
    Hahn-Meitner-Inst., Berlin, Germany
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    531
  • Lastpage
    540
  • Abstract
    A short review is given on the basic properties of semiconducting transition metal silicides and on the methods of their preparation. Special emphasis is put on the electronic and optical properties. Most of the data reported refer to β-FeSi2. Possible applications of the semiconducting silicides are outlined
  • Keywords
    electrical conductivity; epitaxial growth; optical properties; optoelectronic devices; reviews; semiconductor thin films; sputter deposition; thermoelectric devices; transition metal compounds; vacuum deposition; β-FeSi2; CrSi2; FeSi2; Ir2Si3; MnSi1.73; Os2Si3; OsSi; OsSi2; ReSi2; Ru2Si3; electronic properties; optical properties; preparation; semiconducting transition metal silicides; silicide films; Circuits; Contact resistance; Lattices; Optical films; Optical refraction; Semiconductivity; Semiconductor films; Silicides; Thermal resistance; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.495075
  • Filename
    495075
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453585