Effect of electron-hole interaction on electron spin relaxation in GaAs-AlGaAs quantum wells

Author

Gotoh, H. ; Ando, H. ; Sogawa, T. ; Kamada, H. ; Kagawa, T. ; Iwamura, H.

Author_Institution

NTT Basic Res. Labs., Atsugi, Japan

Volume

4

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

1328

Abstract

We measured electron spin relaxation with changing the spatial electron-hole (e-h) separation by applying an electric field in GaAs-AlGaAs quantum wells at room temperature (RT). Even though the electron spin relaxation at RT was previously believed to be independent of any e-h interactions, we found that the electron spin relaxation was drastically suppressed with an increase in the spatial e-h separation. We used a vertical-cavity surface-emitting laser with a separate confinement heterostructure (SCH-VCSEL) having a GaAs-AlGaAs quantum-well (QW) structure in the active region. The photoluminescence (PL) spectrum from the optically excited SCH-VCSEL is shown.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photoluminescence; quantum well lasers; semiconductor quantum wells; surface emitting lasers; GaAs-AlGaAs; GaAs-AlGaAs quantum wells; electron spin relaxation; electron-hole interaction; optically excited SCH-VCSEL; photoluminescence; room temperature; separate confinement heterostructure; spatial electron-hole separation; vertical-cavity surface-emitting laser; Charge carrier processes; Electric variables measurement; Electrons; Gallium arsenide; Laboratories; Polarization; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.814799

Filename

814799