Influence and extraction of series resistances in pseudo-MOS transistors

Author

Rusu, A. ; Ionescu, A.M. ; Cristoloveanu, S. ; Chovet, A. ; Seghir, H.

Author_Institution

Politehnic Univ. of Bucharest, Romania

fYear

1995

fDate

11-14 Oct 1995

Firstpage

557

Lastpage

560

Abstract

The pseudo-MOS transistor technique is used for quick evaluation of several types of SOI wafers: SIMOX from different origins and wafer bonding. The effective mobility for electrons and holes, threshold voltages, film doping, interface state density and series resistances are extracted as a function of probe pressure. The paper focuses on new methods for the extraction of series resistances in MOS-transistors. The form factor of the pseudo-MOS is accurately evaluated by comparison with 4-point probe measurement taking into account the correction induced by series resistances

Keywords

MOSFET; SIMOX; carrier mobility; electric resistance; equivalent circuits; semiconductor device models; silicon-on-insulator; wafer bonding; 4-point probe measurement; MOSFET; SIMOX; SOI wafers; Si; effective mobility; film doping; form factor evaluation; interface state density; pseudo-MOS transistors; series resistances; threshold voltages; wafer bonding; Conductive films; Doping; Immune system; Interface states; MOSFETs; Marketing and sales; Probes; Substrates; Threshold voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.495078

Filename

495078