Title :
High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE
Author :
Lu, Shey-Shi ; Lin, Yo-Shen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A novel structure GaInP/GaAs MISFET with the undoped GaInP serving as the airbridge for gate metal to run over it between the active region and pad was designed and fabricated for high power and high frequency applications. Due to the GaInP airbridge gate structure, a high current drive, high breakdown, high linearity, high speed and low leakage gate current GaInP/GaAs MISFET was achieved
Keywords :
III-V semiconductors; MISFET; chemical beam epitaxial growth; electric breakdown; gallium arsenide; gallium compounds; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; power field effect transistors; GSMBE; GaInP airbridge gate structure; GaInP-GaAs; MISFET; gas source MBE; high breakdown; high current drivability; high frequency applications; high linearity; high power applications; high speed operation; low leakage gate current; undoped GaInP; Bridge circuits; Capacitance; Gallium arsenide; Indium phosphide; Leakage current; MISFETs; Photonic band gap; Radio frequency; Voltage; Wet etching;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495079
