Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas
Author :
Wang, Xue-Lun
Author_Institution :
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba 305-8568, Japan. Phone: +81-29-861-5299; Fax : +81-29-861-3357 ; E-mail: xl.wang@aist.go.jp
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
133
Lastpage :
134
Keywords :
Electrodes; Epitaxial growth; Epitaxial layers; Gallium arsenide; Light emitting diodes; Metals industry; Nanotechnology; Photonic band gap; Substrates; Temperature measurement;
