DocumentCode :
3453706
Title :
Theory of self focusing and self-defocusing in photorefractive InP
Author :
Uzdin, R. ; Segev, M. ; Salamo, G.J.
Author_Institution :
Technion-Israel Inst. of Technol., Haifa, Israel
fYear :
2001
fDate :
11-11 May 2001
Firstpage :
431
Lastpage :
432
Abstract :
Summary form only given. Self-trapping of 1D and 2D optical beams in photorefractive InP has been experimentally observed back in 1996. Here we present the first theory describing the resonant self-focusing effects in photorefractive semiconductors. The theory is based on a models that relies on two donors levels, one deep trap level and conduction of both electrons and holes.
Keywords :
deep levels; diffraction gratings; indium compounds; optical self-focusing; optical solitons; photorefractive materials; 1D optical beams; 2D optical beams; InP; deep trap level; donors levels; electron conduction; hole conduction; low visibility; photorefractive InP; photorefractive semiconductors; self focusing; self-defocusing; self-focusing effects; single periodic interference grating; two-wave-mixing; Charge carrier processes; Indium phosphide; Optical beams; Optical devices; Optimized production technology; Photorefractive effect; Photorefractive materials; Resonance; Solitons; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
Type :
conf
DOI :
10.1109/CLEO.2001.948007
Filename :
948007
Link To Document :
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