Fabrication of High-Power Vertical GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Lift-Off Techniques

A novel process for fabricating high-power Vertical-structure Metallic substrate GaN-based light-emitting diodes (VM-LEDs) employing selective nickel electroplating and patterned laser lift-off (LLO) techniques was proposed. Advantages including the avoidance of metal-cutting process, easy in die size definition through laser spot control, and simplification of fabrication processes (i.e., fewer masks as well as less effort in wire bonding) were demonstrated. As compared to regular lateral-structure LEDs, the VM-LEDs experimentally show having an increase in light output power (Lop) (i.e., ??Lop/Lop) by 293.4% at 350 mA with a decrease in forward voltage from 3.73 V down to 3.32 V.