Title :
MBiCMOS: complex logic and modified gates for improved performance
Author :
Ritts, Rosalyn B. ; Plummer, James D.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
Abstract :
Modified MBiCMOS (merged BiCMOS) gates and complex MBiCMOS logic are demonstrated. The modified MBiCMOS gate uses a low-Vt PMOS device in the gate pulldown to achieve a CMOS/MBiCMOS crossover of 2.4 V. Complex MBiCMOS logic continues to outperform CMOS at scaled supplies. Device merging not viable beyond two-input NAND or NOR functions in a triple-diffused process. However, even without device merging, complex MBiCMOS gates are typically 25% smaller than their BiCMOS equivalents. Complex MBiCMOS gates up to the four-NAND, four-NOR level showed measured CMOS/MBiCMOS crossover voltages of 2.6 V
Keywords :
BIMOS integrated circuits; integrated logic circuits; logic gates; MBiCMOS; NAND; NOR; triple-diffused process; BiCMOS integrated circuits; Delay; Inverters; Logic design; Logic devices; Logic functions; Logic gates; MOS devices; Merging; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160990
