Title :
Study of the electrical behaviour of the IBMCT structure
Author :
Flores, D. ; Vellvehi, Miquel ; Godignon, P. ; Fernández, J. ; Hidalgo, S. ; Rebollo, Jose ; Millán, J.
Author_Institution :
Centro Nacional de Microelectron., Barcelona, Spain
Abstract :
This paper analyzes the operation mode and the electrical characteristics of the Insulated Base MOS-Controlled Thyristor (IBMCT). The device has two gates for turning the device on and off, and a floating ohmic contact which allows the recombination of the hole excess of the body region with electrons coming from the cathode during the turn-off process. Simulated device characteristics of both basic and shorted anode IBMCT structures are presented, and experimental data are also provided from fabricated 650 V devices
Keywords :
MOS-controlled thyristors; ohmic contacts; power semiconductor switches; 650 V; IBMCT structure; electrical behaviour; electrical characteristics; floating ohmic contact; insulated base MOS-controlled thyristor; operation mode; shorted anode type; Anodes; Body regions; Cathodes; Charge carrier processes; Dielectrics and electrical insulation; Electric variables; Ohmic contacts; Spontaneous emission; Thyristors; Turning;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495082
