• DocumentCode
    3453763
  • Title

    UHF AT-cut crystal resonators operating in the fundamental mode

  • Author

    Ishii, Osamu ; Iwata, Hirokazu ; Sugano, Makoto ; Ohshima, Tsuyoshi

  • Author_Institution
    Toyo Commun. Equipment Co. ltd., Kanagawa, Japan
  • fYear
    1998
  • fDate
    27-29 May 1998
  • Firstpage
    975
  • Lastpage
    980
  • Abstract
    The UHF AT-cut crystal resonators operating in the fundamental mode were manufactured using both wet chemical etching technology with high etching rate and reactive ion etching technology with low etching rate for high-precision thickness adjustment in combination. In order to decrease the thermal stress at the interface between the crystal and a electrode, which is caused by a difference of thermal expansion coefficients, a gold electrode was selected as this material has the approximate thermal expansion coefficient as the crystal. The electrode thickness was also examined to have the most suitable plate back ratio. The ratio of the film thickness of the reverse side electrode to the thickness of the crystal substrate (9%), together with the film thickness of the main electrode (60 nm), creates a resonance at center frequency of 622 MHz with a favorable frequency temperature characteristic of frequency shifts within 110 ppm at the temperature range from -35°C to +85°C. Furthermore, the application of this resonator to the configuration of VCXO for the Colpitts oscillation circuit produced a frequency control characteristic of ±120 ppm/+2.5 V±2 V and a phase noise characteristic of -100 dBc/Hz at an offset frequency of 1 kHz
  • Keywords
    UHF oscillators; crystal oscillators; crystal resonators; etching; frequency control; phase noise; sputter etching; thermal expansion; thermal stresses; voltage-controlled oscillators; -35 to 85 C; 622 MHz; Au; Colpitts oscillation circuit; UHF AT-cut crystal resonators; VCXO configuration; crystal substrate thickness; film thickness; frequency control characteristic; frequency shifts; frequency temperature characteristic; fundamental mode operation; gold electrode; high etching rate; high-precision thickness adjustment; interface thermal stress; low etching rate; offset frequency; phase noise characteristic; plate back ratio; reactive ion etching; reverse side electrode; thermal expansion coefficient difference; wet chemical etching; Chemical technology; Crystalline materials; Electrodes; Frequency; Gold; Manufacturing; Temperature distribution; Thermal expansion; Thermal stresses; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International
  • Conference_Location
    Pasadena, CA
  • ISSN
    1075-6787
  • Print_ISBN
    0-7803-4373-5
  • Type

    conf

  • DOI
    10.1109/FREQ.1998.718018
  • Filename
    718018