DocumentCode

3453821

Title

40-W/mm Double Field-plated GaN HEMTs

Author

Wu, Y.F. ; Moore, M. ; Saxler, A. ; Wisleder, T. ; Parikh, P.

Author_Institution

Cree Santa Barbara Technology Center, 340 Storke Road, Goleta, CA 93117

fYear

2006

fDate

26-28 June 2006

Firstpage

151

Lastpage

152

Keywords

Capacitance; Degradation; Feedback; Gallium nitride; HEMTs; MODFETs; Power generation; Robustness; Silicon compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305162

Filename

4097579