Title :
Implementation of Schottky boundary conditions in TRENDY
Author :
Laurentiu, Ciurea
Author_Institution :
Dept. of Electron. & Telecommun., Politehnic Univ. of Bucharest, Romania
Abstract :
This paper describes the numerical implementation of Schottky boundary conditions in the basic module of the two-dimensional process and device simulator TRENDY developed at MESA Research Institute, University of Twente, The Netherlands. The results of simulation of a test structure are represented
Keywords :
Schottky barriers; digital simulation; power semiconductor devices; semiconductor device models; MESA Research Institute; Schottky boundary conditions; TRENDY; device simulator; test structure; two-dimensional process simulator; Bellows; Boundary conditions; Differential equations; Gallium nitride; Isothermal processes; Ohmic contacts; Physics; Radiative recombination; Schottky barriers; Spontaneous emission;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495087
