DocumentCode
3453850
Title
Implementation of Schottky boundary conditions in TRENDY
Author
Laurentiu, Ciurea
Author_Institution
Dept. of Electron. & Telecommun., Politehnic Univ. of Bucharest, Romania
fYear
1995
fDate
11-14 Oct 1995
Firstpage
597
Lastpage
600
Abstract
This paper describes the numerical implementation of Schottky boundary conditions in the basic module of the two-dimensional process and device simulator TRENDY developed at MESA Research Institute, University of Twente, The Netherlands. The results of simulation of a test structure are represented
Keywords
Schottky barriers; digital simulation; power semiconductor devices; semiconductor device models; MESA Research Institute; Schottky boundary conditions; TRENDY; device simulator; test structure; two-dimensional process simulator; Bellows; Boundary conditions; Differential equations; Gallium nitride; Isothermal processes; Ohmic contacts; Physics; Radiative recombination; Schottky barriers; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495087
Filename
495087
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