DocumentCode :
3453908
Title :
A model for describing the effect of series resistance in pseudo-MOS transistors
Author :
Popescu, Anca
Author_Institution :
Politehnic Univ. of Bucharest, Romania
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
609
Lastpage :
612
Abstract :
This work presents the modeling of drain and source series resistances (RS and RD) effects in MOS transistors, in the linear and saturation regions of operation. The investigation is focused on the saturation regime, where RS and RD can be determined independently. There are also presented typical values extracted for MOSFET series resistances
Keywords :
MOSFET; electric resistance; semiconductor device models; silicon-on-insulator; MOSFET model; SOI; Si; linear region; pseudo-MOS transistors; pseudo-MOSFET; saturation region; series resistance; Capacitance; Engineering profession; Equations; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.495090
Filename :
495090
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453908
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