• DocumentCode
    3453908
  • Title

    A model for describing the effect of series resistance in pseudo-MOS transistors

  • Author

    Popescu, Anca

  • Author_Institution
    Politehnic Univ. of Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    609
  • Lastpage
    612
  • Abstract
    This work presents the modeling of drain and source series resistances (RS and RD) effects in MOS transistors, in the linear and saturation regions of operation. The investigation is focused on the saturation regime, where RS and RD can be determined independently. There are also presented typical values extracted for MOSFET series resistances
  • Keywords
    MOSFET; electric resistance; semiconductor device models; silicon-on-insulator; MOSFET model; SOI; Si; linear region; pseudo-MOS transistors; pseudo-MOSFET; saturation region; series resistance; Capacitance; Engineering profession; Equations; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.495090
  • Filename
    495090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453908