DocumentCode :
3453913
Title :
1.74 mΩcm2, High-Voltage 4H-SiC Vertical-Channel JFETs for High-Power Applications
Author :
Cheng, L. ; Sankin, I. ; Merrett, N. ; Casady, J.R.B. ; Draper, W. ; King, W. ; Bondarenko, V. ; Mazzola, M.S. ; Casady, J.B.
Author_Institution :
SemiSouth Laboratories, Inc., 201 Research Blvd., Starkville, MS, 39759 USA. Phone: 1-662-324-7607, Fax: 1-662-324-7997, Email: lin.cheng@semisouth.com
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
159
Lastpage :
160
Keywords :
Bonding; FETs; JFETs; Laboratories; Leakage current; Power conditioning; Robust stability; Silicon carbide; Vehicles; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305165
Filename :
4097582
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3453913
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