Title :
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs
Author :
Suh, C.-S. ; Chini, A. ; Fu, Y. ; Poblenz, C. ; Speck, J.S. ; Mishra, U.K.
Author_Institution :
Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 USA. Email: suh@umail.ucsb.edu, Phone: (805)893-3812, Fax: (805)893-8714
Keywords :
Aluminum gallium nitride; Dry etching; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma devices; Plasma measurements; Pulse measurements; Threshold voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305167
