Title :
InAsP/InAs Nanowire Heterostructure Field Effect Transistors
Author :
Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Solid State Physics / Nanometer Consortium, Lund University, Box 118, S-22100 Sweden
Keywords :
Doping; FETs; Geometry; HEMTs; MODFETs; Nanoscale devices; Photonic band gap; Physics; Solid state circuits; Voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305171
