DocumentCode :
3454083
Title :
Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals
Author :
Naito, Shinya ; Ueyama, Tomonori ; Kondo, Hiroki ; Sakashita, Mitsuo ; Sakai, Akira ; Ogawa, Masaki ; Zaima, Shigeaki
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
170
Lastpage :
171
Keywords :
Capacitance-voltage characteristics; Fabrication; Grain size; MOS capacitors; Nanocrystals; Nitrogen; Nonvolatile memory; Oxidation; Surface treatment; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245778
Filename :
1459528
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3454083
