DocumentCode :
3454102
Title :
Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy
Author :
Kim, E.K. ; Kim, J.S. ; Kwon, S.-Y. ; Kim, H.J. ; Yoon, E.
fYear :
2004
fDate :
Oct. 27-29, 2004
Firstpage :
172
Lastpage :
173
Keywords :
Atomic force microscopy; Atomic measurements; Energy states; Force measurement; Gallium nitride; Light emitting diodes; Optical devices; Quantum dots; Spectroscopy; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
Type :
conf
DOI :
10.1109/IMNC.2004.245779
Filename :
1459529
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3454102
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