Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes

Author

Gottlob, H.D.B. ; Schmidt, M. ; Kurz, H.

Author_Institution

Adv. Microelectron. Center Aachen (AMICA), AMO GmbH, Aachen, Germany

fYear

2009

fDate

6-8 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd₂O₃ and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.

Keywords

MOSFET; epitaxial layers; gadolinium compounds; high-k dielectric thin films; thermal stability; titanium compounds; Gd₂O₃-TiN; GdSiO-TiN; MOSFETs; epitaxial high-k layers; gate stacks; high-k dielectrics; metal gate electrodes; thermal stability; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; MOSFETs; Silicon; Temperature; Thermal stability; Tin; Gd2O3; GdSiO; electron mobility; gate-first integration; high-k dielectric; metal gate elektrode; thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems (SCS), 2009 3rd International Conference on

Conference_Location

Medenine

Print_ISBN

978-1-4244-4397-0

Electronic_ISBN

978-1-4244-4398-7

Type

conf

DOI

10.1109/ICSCS.2009.5412232

Filename

5412232