Title :
Gate-first integration of Gd-based high-k dielectrics with metal gate electrodes
Author :
Gottlob, H.D.B. ; Schmidt, M. ; Kurz, H.
Author_Institution :
Adv. Microelectron. Center Aachen (AMICA), AMO GmbH, Aachen, Germany
Abstract :
In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd2O3 and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.
Keywords :
MOSFET; epitaxial layers; gadolinium compounds; high-k dielectric thin films; thermal stability; titanium compounds; Gd2O3-TiN; GdSiO-TiN; MOSFETs; epitaxial high-k layers; gate stacks; high-k dielectrics; metal gate electrodes; thermal stability; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; MOSFETs; Silicon; Temperature; Thermal stability; Tin; Gd2O3; GdSiO; electron mobility; gate-first integration; high-k dielectric; metal gate elektrode; thermal stability;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5412232
