Title :
Control of inas quantum dot emission wavelengths in narrow regions by selective formation of GaInAs covered layers grown with in-situ mask
Author :
Ohkouchi, S. ; Y Nakamura ; Nakamura, H. ; Asakawa, K.
Keywords :
Gallium arsenide; Molecular beam epitaxial growth; Nonlinear optical devices; Nonlinear optics; Optical switches; Photoluminescence; Quantum dots; US Department of Transportation; Ultrafast optics; Wavelength measurement;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN :
4-99024720-5
DOI :
10.1109/IMNC.2004.245781
