a-plane GaN Shear Wave Thin Film Resonator

Author

Loschonsky, Marc ; Reindl, Leonhard ; Dadgar, Armin ; Wieneke, Matthias ; Bläsing, Jürgen ; Krost, Alois

Author_Institution

Freiburg Univ., Freiburg

fYear

2007

fDate

May 29 2007-June 1 2007

Firstpage

494

Lastpage

498

Abstract

This paper focuses on metal-organic-vapor-phase-epitaxial (MOVPE) grown on a-plane gallium-nitride (GaN), representing a novel approach for piezoelectric materials with good prospects for quartz-crystal-microbalance (QMB), like sensors with respect to its biocompatibility and frequency filter applications. Material characteristics of gallium-nitride as well as the processing of shear wave resonators and their acoustical characteristics are as well discussed

Keywords

III-V semiconductors; elastic waves; filters; gallium compounds; piezoelectric materials; thin film circuits; vapour phase epitaxial growth; wide band gap semiconductors; frequency filter applications; gallium-nitride representation; metal-organic-vapor-phase-epitaxial; piezoelectric materials; quartz-crystal-microbalance; shear wave resonators; shear wave thin film resonators; Acoustic sensors; Biosensors; Epitaxial growth; Epitaxial layers; Frequency; Gallium nitride; Piezoelectric films; Piezoelectric materials; Sensor phenomena and characterization; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International

Conference_Location

Geneva

ISSN

1075-6787

Print_ISBN

978-1-4244-0646-3

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2007.4319123

Filename

4319123