Title :
Process and device modelling of mm-wave HEMTs
Author_Institution :
Microwave & Terahertz Technol. Group, Leeds Univ., UK
Abstract :
The application of one and quasi-two dimensional numerical models to the analysis of HEMT processing and design is considered in this paper. The usefulness of these models is demonstrated for interpreting the ambiguities which occur when considering the typical measurements which are performed at the different stages of HEMT fabrication. In particular, some of the more subtle questions of HEMT design are addressed to illustrate the power of the quasi-two dimensional modelling approach
Keywords :
Hall mobility; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device models; semiconductor process modelling; two-dimensional electron gas; 2DEG density; C-V response simulation; GaAs; HEMT design; HEMT processing; Hall profile; device modelling; mm-wave HEMTs; one dimensional numerical models; process modelling; quasi-two dimensional numerical models;
Conference_Titel :
Terahertz Technology, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19951483
