DocumentCode :
3454634
Title :
Architecting energy efficient crossbar-based memristive random-access memories
Author :
Lastras-Montano, Miguel Angel ; Ghofrani, Amirali ; Kwang-Ting Cheng
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fYear :
2015
fDate :
8-10 July 2015
Firstpage :
1
Lastpage :
6
Abstract :
Memristive devices are promising candidates for future high-density, power-efficient memories. The sneak path problem of purely-resistive crossbars and the inherent nanowire voltage drop, however, prevent the use of memristors in large-scale memory systems. In this paper we provide a simple yet flexible 3D memory organization and decoding scheme for memristive crossbars that exploits the benefits of the CMOL interface and avoid the limitations of conventional resistive crossbars. We propose an electrical model of the system to simulate and estimate its delay and energy consumption and show that such memories provide high read/write concurrency with power consumption per read/write operation that is significantly lower than that of DRAM.
Keywords :
DRAM chips; low-power electronics; memristor circuits; nanowires; three-dimensional integrated circuits; 3D memory organization; CMOL interface; DRAM; decoding scheme; energy efficient crossbar; memristive crossbars; memristive devices; memristive random-access memories; memristors; nanowire voltage drop; power-efficient memories; purely-resistive crossbars; sneak path problem; Arrays; CMOS integrated circuits; Decoding; Memristors; Microprocessors; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on
Conference_Location :
Boston, MA
Type :
conf
DOI :
10.1109/NANOARCH.2015.7180575
Filename :
7180575
Link To Document :
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