Mass Sensitivity of Thin Film Resonator Devices

Author

Wingqvist, G. ; Yantchev, V. ; Bjurstrom, J. ; Katardjiev, I.

Author_Institution

Uppsala Univ., Uppsala

fYear

2007

fDate

May 29 2007-June 1 2007

Firstpage

581

Lastpage

586

Abstract

A systematic study of the influence of the materials´ properties and thickness in composite thin film bulk acoustic resonators (FBAR) on the mass sensitivity is presented. Calculations based on the Mason transmission line model are presented along with some preliminary experimental results. We present and investigate the concept of sensitivity amplification in the mass sensitive regime and show how this amplification correlates with wave reflection and interference within the composite structure. Asymmetrical resonators where the sensitivity differs between the two different surfaces are also presented.

Keywords

acoustic resonators; bulk acoustic wave devices; thin film circuits; transmission lines; Mason transmission line model; composite structure; composite thin film bulk acoustic resonators; mass sensitivity; sensitivity amplification; wave reflection; Acoustic materials; Acoustic sensors; Biological materials; Electrodes; Film bulk acoustic resonators; Piezoelectric films; Resonance; Resonant frequency; Thin film devices; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International

Conference_Location

Geneva

ISSN

1075-6787

Print_ISBN

978-1-4244-0646-3

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2007.4319138

Filename

4319138