DocumentCode :
3454738
Title :
Mass Sensitivity of Thin Film Resonator Devices
Author :
Wingqvist, G. ; Yantchev, V. ; Bjurstrom, J. ; Katardjiev, I.
Author_Institution :
Uppsala Univ., Uppsala
fYear :
2007
fDate :
May 29 2007-June 1 2007
Firstpage :
581
Lastpage :
586
Abstract :
A systematic study of the influence of the materials´ properties and thickness in composite thin film bulk acoustic resonators (FBAR) on the mass sensitivity is presented. Calculations based on the Mason transmission line model are presented along with some preliminary experimental results. We present and investigate the concept of sensitivity amplification in the mass sensitive regime and show how this amplification correlates with wave reflection and interference within the composite structure. Asymmetrical resonators where the sensitivity differs between the two different surfaces are also presented.
Keywords :
acoustic resonators; bulk acoustic wave devices; thin film circuits; transmission lines; Mason transmission line model; composite structure; composite thin film bulk acoustic resonators; mass sensitivity; sensitivity amplification; wave reflection; Acoustic materials; Acoustic sensors; Biological materials; Electrodes; Film bulk acoustic resonators; Piezoelectric films; Resonance; Resonant frequency; Thin film devices; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
Conference_Location :
Geneva
ISSN :
1075-6787
Print_ISBN :
978-1-4244-0646-3
Electronic_ISBN :
1075-6787
Type :
conf
DOI :
10.1109/FREQ.2007.4319138
Filename :
4319138
Link To Document :
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