Title :
A Novel Vertical Field Plate Lateral Device With Ultralow Specific On-Resistance
Author :
Wentong Zhang ; Bo Zhang ; Ming Qiao ; Lijuan Wu ; Kun Mao ; Zhaoji Li
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel vertical field plate (VFP) lateral device with ultralow specific on-resistance (RON,sp) is proposed in this paper. The VFP surrounded by oxide is inserted in the bulk of the drift region. Compared to the surface local depletion of the conventional lateral field plate (LFP), the depletion layer of the VFP expands to the bulk of the drift region, which enhances the bulk electric field. Therefore, ultralow RON,sp is realized in the VFP device due to high drift-region doping (Nd) and short cell pitch. An analytical FP model is developed to describe the behavior of the VFP, in which the breakdown voltage (BV) and Nd are found to be proportional to the FP factor k. Then the uniform-doped VFP laterally diffused MOSs and the step-doped VFP laterally diffused MOS are proposed. The optimized device exhibits a BV of 945 V and a RON,sp of 34 mΩ·cm2 which are superior to those of similar devices and the silicon limit.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device models; LFP; VFP laterally diffused MOS; breakdown voltage; depletion layer; drift-region doping; lateral field plate; silicon limit; surface local depletion; ultralow specific on-resistance; vertical field plate lateral device; voltage 945 V; Dielectrics; Doping; Educational institutions; Electric potential; Equations; Etching; Silicon; $R_{{rm ON},{rm sp}}$; Breakdown voltage; enhanced bulk depletion; laterally diffused MOS; silicon limit; surface local depletion; vertical field plate (VFP);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2294643
