Realization of a Ge nanowire p-n junction

Author

Tutuc, E. ; Appenzeller, J. ; Reuter, M.C. ; Guha, S.

Author_Institution

I.B.M. T.J. Watson Research Center, Yorktown Heights, NY 10598. phone: 9140-945-1909, fax: 914-945-2141, email: etutuc@us.ibm.com

fYear

2006

fDate

26-28 June 2006

Firstpage

249

Lastpage

250

Keywords

Annealing; CMOS technology; FETs; Gold; Joining processes; Nanoscale devices; P-n junctions; Semiconductor device doping; Substrates; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

DOI

10.1109/DRC.2006.305078

Filename

4097622

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