• DocumentCode
    3454965
  • Title

    Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs

  • Author

    Indlekofer, Klaus Michael ; Knoch, Joachim ; Appenzeller, Joerg

  • Author_Institution
    Institute for Thin Films and Interfaces and CNI, Research Centre Jÿlich, D-52425 Jÿlich, Germany. phone: +49-(0)2461-613580, fax: +49-(0)2461-612940, email: m.indlekofer@fz-juelich.de
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    253
  • Lastpage
    254
  • Keywords
    Coaxial components; Electrodes; FETs; Green´s function methods; Quantum dots; Quantum mechanics; Schottky gate field effect transistors; Single electron transistors; Temperature; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305080
  • Filename
    4097624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3454965