Title :
Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs
Author :
Indlekofer, Klaus Michael ; Knoch, Joachim ; Appenzeller, Joerg
Author_Institution :
Institute for Thin Films and Interfaces and CNI, Research Centre Jÿlich, D-52425 Jÿlich, Germany. phone: +49-(0)2461-613580, fax: +49-(0)2461-612940, email: m.indlekofer@fz-juelich.de
Keywords :
Coaxial components; Electrodes; FETs; Green´s function methods; Quantum dots; Quantum mechanics; Schottky gate field effect transistors; Single electron transistors; Temperature; Thin film transistors;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305080
