Title :
980 nm high power quantum dot lasers improved high temperature properties
Author :
Klopf, F. ; Reithmaier, J.P. ; Forchel, A. ; Collot, P. ; Krakowski, M.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
Abstract :
Summary form only given. The inherent features of quantum dot lasers like their higher wavelength stability compared to quantum well lasers and a reduced lateral carrier diffusion make them especially interesting for high power applications such as the pumping of rare earth lasers or fiber amplifiers. Quantum dot lasers have already been shown to have the potential for high power applications at different wavelengths. We present quantum dot lasers with improved high temperature properties. To summarize, we have realized high power quantum dot lasers with output powers as high as 3.8 W from a single facet which is twice as high as previously reported values. The high internal quantum efficiency of about 90% and the low internal absorption level of the laser structure allow wall plug efficiencies above 50%. In addition, the lasers show very good high temperature properties and thus overcome a crucial drawback of existing devices. The presented lasers are the first high power quantum dot lasers suitable for industrial applications.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; waveguide lasers; 980 nm; GaInAs; carrier confinement; graded index waveguide; high internal quantum efficiency; high power quantum dot lasers; improved high temperature properties; industrial applications; low internal absorption level; molecular beam epitaxy; reduced lateral carrier diffusion; short period superlattice; wall plug efficiencies; Fiber lasers; High power amplifiers; Laser excitation; Laser stability; Power generation; Power lasers; Pump lasers; Quantum dot lasers; Quantum well lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.948069