Outgassing characteristics of low molecular weight resist for EUVL

Extreme ultraviolet (EUV) lithogmphy requires a vacuum environment for exposure. Therefore, it is critical to understand the outgassing hydrocarbon ion species of the photoresist. Any contamination which due to the hydrocarbons reduces the reflectivities of the mask and the imaging mirror and the lithographic performance.^1-3) In this paper, we discuss the outgassing characterigics of new concept resist system, which is based on amorphous low molecular weight polyphenols.⁴⁾ The resist which consists of 4,4´ -methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)]methyl] phenol (3M6C-MBSA) has already shown excellent lithographic performance, surface roughness and etch selectivity as compared to Poly-hydroxystyrene (PHOST) based resist under eIectron beam exposure.