Title :
A bandgap voltage reference using digital CMOS process
Author :
Vermaas, Luiz L G ; De Mori, Carlos R T ; Moreno, Robson L. ; Pereira, Adriano M. ; Charry, R. Edgar
Author_Institution :
Grupo de Microeletronica, Escola Fed. de Engenharia de Itajuba, Itajuba, Brazil
Abstract :
This work describes some issues and criteria for the design of a bandgap voltage reference. It examines a particular voltage reference architecture, characteristics of the operational amplifier, parasitic bipolar transistor biasing currents and the start-up circuit. Test circuits have been fabricated in the AMS 0.8 μm n-well CMOS process. Experimental results yield an output voltage which is constant within 0.72% over the temperature range of -40°C to 95°C and the power supply range of 5 V±10%
Keywords :
CMOS analogue integrated circuits; integrated circuit design; operational amplifiers; reference circuits; -10 to 95 C; 0.8 micron; 5 V; AMS n-well CMOS process; bandgap voltage reference; digital CMOS process; op amp characteristics; operational amplifier; parasitic bipolar transistor biasing currents; start-up circuit; Bipolar transistors; CMOS process; Circuit testing; Doping; MOSFETs; Operational amplifiers; Photonic band gap; Power supplies; Temperature; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 1998 IEEE International Conference on
Conference_Location :
Lisboa
Print_ISBN :
0-7803-5008-1
DOI :
10.1109/ICECS.1998.814886
