Title :
Fast march tests for defects in resistive memory
Author :
Mozaffari, Seyed Nima ; Tragoudas, Spyros ; Haniotakis, Themistoklis
Author_Institution :
Sch. of Electr. & Comput. Eng., Southern Illinois Univ., Carbondale, IL, USA
Abstract :
Resistive Memory is a promising candidate to several applications. However, is prone to high defects due to the nanoscale fabrication uncertainties. Test time of traditional testing techniques is dominated by writes which are slower than reads. Fast March tests for defects in resistive memory are proposed in this paper. Test application time is reduced by approximately 96% when compared to existing methods. An appropriate DfT scheme to implement the new test approach is also proposed.
Keywords :
design for testability; integrated circuit testing; nanofabrication; resistive RAM; DfT scheme; design for testability; fast march tests; nanoscale fabrication uncertainty; resistive memory; Decision support systems; Nanoscale devices; DfT Overhead; March test; fault detection; metal-oxide memristor; resistive memory;
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on
Conference_Location :
Boston, MA
DOI :
10.1109/NANOARCH.2015.7180592
