Title :
Effects of facet head-on light ion-irradiation in InGaP/GaAs/InGaAs quantum well lasers
Author :
Pataro, L.L. ; Nascimento, G.C. ; Danilov, I. ; Frateschi, Newton C.
Author_Institution :
Instituto de Fisica, Univ. Estadual de Campinas, Brazil
Abstract :
Summary form only given. We present results on the reduction in free-carrier absorption for n-InGaP material with He/sup +/ ion irradiation. Threshold doses for isolation above 1/spl times/10/sup 13/ cm/sup -2/ at 100 keV are obtained. Transparency through 1 /spl mu/m of n-InGaP material is examined by photoluminescence. We find a twofold increase in quantum well emission photoluminescence intensity after irradiation. Also, damage to the quantum well is investigated as a function of irradiation energy and quantum well depth. Finally, we investigate irradiation effects on the field intensity and temperature distribution at the facets. Evidence of enhancement in cladding layer transparency to the laser emission is observed on the irradiated facet. Therefore, less facet heating and degradation is expected with the head-on irradiation treatment.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion beam effects; photoluminescence; quantum well lasers; semiconductor quantum wells; temperature distribution; 100 keV; He/sup +/ ion irradiation; InGaP-GaAs-InGaAs; InGaP/GaAs/InGaAs quantum well lasers; cladding layer transparency; facet head-on light ion irradiation effects; facet temperature distribution; field intensity; free-carrier absorption; irradiation energy; n-InGaP; photoluminescence; quantum well damage; quantum well depth; quantum well emission photoluminescence intensity; ridge waveguide lasers; threshold isolation doses; transparency; Absorption; Gallium arsenide; Indium gallium arsenide; Laser modes; Mirrors; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.948070